The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Sep. 02, 2010
Hideaki Sakurai, Naka-gun, JP;
Toshiaki Watanabe, Sanda, JP;
Nobuyuki Soyama, Kobe, JP;
Mitsubishi Materials Corporation, Tokyo, JP;
Abstract
In this process of forming a dielectric thin film, when a dielectric thin film represented by BaSrTiO(0.2<x<0.6 and 0.9<y<1.1) is formed by a sol-gel method, the process from coating to baking is carried out 2 to 9 times, the thickness of the thin film formed after the initial baking is 20 nm to 80 nm, the thickness of each thin film formed after the second baking and beyond is 20 nm to less than 200 nm, each baking from the first time to the second to ninth times is carried out by heating to a prescribed temperature within the range of 500° C. to 800° C. at a heating rate of 1° C. to 50° C./minute in an atmosphere at atmospheric pressure, and the total thickness of the dielectric thin film is 100 nm to 600 nm.