The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2014

Filed:

Dec. 11, 2012
Applicants:

Da-wei Lai, Singapore, SG;

Handoko Linewih, Singapore, SG;

Ying-chang Lin, Singapore, SG;

Inventors:

Da-Wei Lai, Singapore, SG;

Handoko Linewih, Singapore, SG;

Ying-Chang Lin, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/00 (2006.01); H02H 9/04 (2006.01); H01C 7/12 (2006.01); H02H 1/00 (2006.01); H02H 1/04 (2006.01); H02H 3/22 (2006.01);
U.S. Cl.
CPC ...
H02H 9/04 (2013.01);
Abstract

A triple stack NMOS integrated circuit structure protection circuit for a plurality of terminals operative at respective voltage levels is coupled between the plurality of terminals. First and second NMOS elements of the triple stack NMOS share a common active region. A third NMOS element, vertically positioned with respect to the first and second NMOS elements, has an active region separate from the active region of the first and second NMOS elements. The first, second and third NMOS elements are connected in series between two terminals of the plurality of terminals.


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