Semiconductor device and method for producing the same

Abstract

In a vertical semiconductor device including a channel in an opening, a semiconductor device whose high-frequency characteristics can be improved and a method for producing the semiconductor device are provided. The semiconductor device includes n-type GaN-based drift layer/p-type GaN-based barrier layer/n-type GaN-based contact layer. An openingextends from a top layer and reaches the n-type GaN-based drift layer. The semiconductor device includes a regrown layerlocated so as to cover the opening, the regrown layerincluding an electron drift layerand an electron supply layer, a source electrode S, a drain electrode D, and a gate electrode G located on the regrown layer. Assuming that the source electrode serving as one electrode and the drain electrode serving as the other electrode constitute a capacitor, the semiconductor device includes a capacitance-decreasing structure that decreases the capacitance of the capacitor.