The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Sep. 17, 2010
Makoto Miyoshi, Nagoya, JP;
Yoshitaka Kuraoka, Nagoya, JP;
Shigeaki Sumiya, Nagoya, JP;
Mitsuhiro Tanaka, Nagoya, JP;
Makoto Miyoshi, Nagoya, JP;
Yoshitaka Kuraoka, Nagoya, JP;
Shigeaki Sumiya, Nagoya, JP;
Mitsuhiro Tanaka, Nagoya, JP;
NGK Insulators, Ltd., Nagoya, JP;
Abstract
Provided is an epitaxial substrate capable of manufacturing a HEMT device that has excellent two-dimensional electron gas characteristics and is capable of performing normally-off operation. A channel layer is formed of a first group III nitride represented by InAlGaN (x1+y1+z1=1) so as to have a composition in a range determined by x1=0 and 0≦y1≦0.3. A barrier layer is formed of a second group III nitride represented by InAlGaN (x2+y2+z2=1) so as to have a composition, in a ternary phase diagram with InN, AlN and GaN being vertices, in a range surrounded by four straight lines determined in accordance with the composition (AlN molar fraction) of the first group III nitride and to have a thickness of 5 nm or less.