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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8890175 B1

PDFFull Text
Expired
Date of Patent:
Nov. 18, 2014

Filed:

Mar. 13, 2013

Nitride-based semiconductor element and method for fabricating the same

Applicant:

Panasonic Corporation, Osaka, JP;

Inventors:

Toshiya Yokogawa, Nara, JP;

Naomi Anzue, Osaka, JP;

Akira Inoue, Osaka, JP;

Ryou Kato, Osaka, JP;

Assignee:

Panasonic Corporation, Osaka, JP;

Attorney:

Renner, Otto, Boisselle & Sklar, LLP

Primary Examiner:

Matthew W Such

Assistant Examiner:

Frederick B Hargrove

Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 33/16 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/40 (2013.01); H01L 21/02389 (2013.01); H01L 21/0254 (2013.01); H01L 21/02579 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02581 (2013.01); H01L 29/045 (2013.01); H01L 33/16 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A nitride-based semiconductor element according to an embodiment of the present disclosure includes: a p-type contact layer, of which the growing plane is an m plane; and an electrode which is arranged on the growing plane of the p-type contact layer. The p-type contact layer is a GaN-based semiconductor layer which has a thickness of 26 nm to 60 nm and which includes oxygen at a concentration that is equal to or higher than Mg concentration of the p-type contact layer. In the p-type contact layer, the number of Ga vacancies is larger than the number of N vacancies.

Find Patent Forward Citations

Yokogawa, Toshiya. (2014). Nitride-based semiconductor element and method for fabricating the same (U.S. Patent No. 8890175). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8890175

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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