The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Mar. 13, 2013
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 33/16 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/40 (2013.01); H01L 21/02389 (2013.01); H01L 21/0254 (2013.01); H01L 21/02579 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02581 (2013.01); H01L 29/045 (2013.01); H01L 33/16 (2013.01); H01L 2933/0016 (2013.01);
Abstract
A nitride-based semiconductor element according to an embodiment of the present disclosure includes: a p-type contact layer, of which the growing plane is an m plane; and an electrode which is arranged on the growing plane of the p-type contact layer. The p-type contact layer is a GaN-based semiconductor layer which has a thickness of 26 nm to 60 nm and which includes oxygen at a concentration that is equal to or higher than Mg concentration of the p-type contact layer. In the p-type contact layer, the number of Ga vacancies is larger than the number of N vacancies.