The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Mar. 08, 2012
Pao-an Chang, Taoyuan County, TW;
Ching-ming Lee, Miaoli County, TW;
Te-yuan Wu, Hsinchu, TW;
Chih-chung Wang, Hsinchu, TW;
Wen-fang Lee, Hsinchu, TW;
Wei-lun Hsu, Hsinchu County, TW;
Pao-An Chang, Taoyuan County, TW;
Ching-Ming Lee, Miaoli County, TW;
Te-Yuan Wu, Hsinchu, TW;
Chih-Chung Wang, Hsinchu, TW;
Wen-Fang Lee, Hsinchu, TW;
Wei-Lun Hsu, Hsinchu County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A high voltage semiconductor device includes a substrate, an insulating layer positioned on the substrate, and a silicon layer positioned on the insulating layer. The silicon layer further includes at least a first doped strip, two terminal doped regions formed respectively at two opposite ends of the silicon layer and electrically connected to the first doped strip, and a plurality of second doped strips. The first doped strip and the terminal doped regions include a first conductivity type, the second doped strips include a second conductivity type, and the first conductivity type and the second conductivity type are complementary. The first doped strip and the second doped strips are alternately arranged.