The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Oct. 26, 2011
Joachim Krumrey, Goedersdorf, AT;
Gerhard Noebauer, Villach, AT;
Martin Poelzl, Oissach, AT;
Marc Probst, Radeberg, DE;
Joachim Krumrey, Goedersdorf, AT;
Gerhard Noebauer, Villach, AT;
Martin Poelzl, Oissach, AT;
Marc Probst, Radeberg, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A transistor component and method of forming a transistor component. One embodiment provides a semiconductor arrangement including a semiconductor body having a at least one first trench, a first field electrode arranged in the lower trench section of the at least one first trench and being insulated from the semiconductor body by a field electrode dielectric. A dielectric layer is formed on the first field electrode in the at least one first trench, including depositing a dielectric material on a first side of the semiconductor body and on the field plate at a higher deposition rate than on sidewalls of the at least one first trench.