The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Jun. 20, 2007
Chih-ta Wu, Hsinchu, TW;
Jason Lee, Jhubei, TW;
Chung Chien Wang, Tucheng, TW;
Hsing-lien Lin, Hsinchu, TW;
Yu-jen Wang, Hsinchu, TW;
Yeur-luen Tu, Taichung, TW;
Chern-yow Hsu, Chu-Bei, TW;
Yuan-hung Liu, Hsinchu, TW;
Chi-hsin Lo, Taichung, TW;
Chia-shiung Tsai, Hsinchu, TW;
Lucy Chang, Taipei, TW;
Chia-lin Chen, Jhubei, TW;
Ming-chih Tsai, Hsinchu, TW;
Chih-Ta Wu, Hsinchu, TW;
Jason Lee, Jhubei, TW;
Chung Chien Wang, Tucheng, TW;
Hsing-Lien Lin, Hsinchu, TW;
Yu-Jen Wang, Hsinchu, TW;
Yeur-Luen Tu, Taichung, TW;
Chern-Yow Hsu, Chu-Bei, TW;
Yuan-Hung Liu, Hsinchu, TW;
Chi-Hsin Lo, Taichung, TW;
Chia-Shiung Tsai, Hsinchu, TW;
Lucy Chang, Taipei, TW;
Chia-Lin Chen, Jhubei, TW;
Ming-Chih Tsai, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer.