The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Dec. 29, 2010
Applicants:
Eng Huat Toh, Singapore, SG;
Jae Gon Lee, Singapore, SG;
Chung Foong Tan, Singapore, SG;
Elgin Quek, Singapore, SG;
Inventors:
Eng Huat Toh, Singapore, SG;
Jae Gon Lee, Singapore, SG;
Chung Foong Tan, Singapore, SG;
Elgin Quek, Singapore, SG;
Assignee:
GlobalFoundries Singapore Pte. Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 21/00 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A fin type transistor includes a dielectric layer on a substrate surface which serves to isolate the gate of the transistor from the substrate. The dielectric layer includes a non-selectively etched surface to produce top portions of fin structures which have reduce height variations across the wafer. The fin type transistor may also include a counter doped region at least below the S/D regions to reduce parasitic capacitance to improve its performance.