The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Sep. 05, 2012
Shunpei Yamazaki, Tokyo, JP;
Tetsunori Maruyama, Kanagawa, JP;
Yuki Imoto, Kanagawa, JP;
Hitomi Sato, Kanagawa, JP;
Masahiro Watanabe, Tochigi, JP;
Mitsuo Mashiyama, Tochigi, JP;
Kenichi Okazaki, Tochigi, JP;
Motoki Nakashima, Kanagawa, JP;
Takashi Shimazu, Tokyo, JP;
Shunpei Yamazaki, Tokyo, JP;
Tetsunori Maruyama, Kanagawa, JP;
Yuki Imoto, Kanagawa, JP;
Hitomi Sato, Kanagawa, JP;
Masahiro Watanabe, Tochigi, JP;
Mitsuo Mashiyama, Tochigi, JP;
Kenichi Okazaki, Tochigi, JP;
Motoki Nakashima, Kanagawa, JP;
Takashi Shimazu, Tokyo, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.