The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2014

Filed:

Mar. 01, 2013
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Hans-Peter Moll, Dresden, DE;

Joachim Patzer, Langebruck, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02107 (2013.01);
Abstract

One illustrative method disclosed herein includes forming a structure above a semiconductor substrate, performing a conformal deposition process to form a layer of undoped spacer material above the structure, performing an angled ion implant process to form a region of doped spacer material in the layer of undoped spacer material while leaving other portions of the layer of undoped spacer material undoped, and, after performing the angled ion implant process, performing at least one etching process that removes the undoped portions of the layer of undoped spacer material and thereby results in a sidewall spacer comprised of the doped spacer material positioned adjacent at least one side, but not all sides, of the structure.


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