The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Jan. 28, 2013
Cheong M. Hong, Austin, TX (US);
Ronald J. Syzdek, Austin, TX (US);
Brian A. Winstead, Austin, TX (US);
Cheong M. Hong, Austin, TX (US);
Ronald J. Syzdek, Austin, TX (US);
Brian A. Winstead, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method of programming a split gate memory applies voltages differently to the terminals of the selected cells and the deselected cells. For cells being programming by being coupled to a selected row and a selected column, coupling the control gate to a first voltage, coupling the select gate to a second voltage, programming is achieved by coupling the drain terminal to a current sink that causes the split gate memory cell to be conductive, and coupling the source terminal to a third voltage. For cells not being programmed by not being coupled to a selected row, non-programming is maintained by coupling the control gate to the first voltage, coupling the select gate to a fourth voltage which is greater than a voltage applied to the select gate during a read in which the split gate memory cells are deselected but sufficiently low to prevent programming.