The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Feb. 18, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, KR;

Inventors:

Sok-Won Lee, Yongin-si, KR;

Joon-Hee Lee, Seongnam-si, KR;

Jung-Dal Choi, Hwaseong-si, KR;

Seong-Min Jo, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 21/033 (2006.01); H01L 27/115 (2006.01); H01L 21/764 (2006.01); H01L 23/52 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 23/52 (2013.01); H01L 21/0337 (2013.01); H01L 27/11519 (2013.01); H01L 21/764 (2013.01); H01L 21/768 (2013.01); H01L 27/11524 (2013.01); H01L 27/1157 (2013.01); H01L 23/5222 (2013.01); H01L 23/53295 (2013.01); H01L 27/11565 (2013.01); H01L 21/32139 (2013.01);
Abstract

In one embodiment, first and second pattern structures respectively include first and second conductive line patterns and first and second hard masks sequentially stacked, and at least portions thereof extends in a first direction. The insulation layer patterns contact end portions of the first and second pattern structures. The first pattern structure and a first insulation layer pattern of the insulation layer patterns form a first closed curve shape in plan view, and the second pattern structure and a second insulation layer pattern of the insulation layer patterns form a second closed curve shape in plan view. The insulating interlayer covers upper portions of the first and second pattern structures and the insulation layer patterns, a first air gap between the first and second pattern structures, and a second air gap between the insulation layer patterns.


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