The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Jan. 18, 2013
Leo Liu, Shanghai, CN;
Allan He, Shanghai, CN;
Semiconductor Manufacturing International Corp., Shanghai, CN;
Abstract
Various embodiments provide complementary metal-oxide-semiconductor (CMOS) devices and their fabrication methods. A semiconductor substrate is provided to include a first region to form a PMOS transistor and a second region to form an NMOS transistor. One of the first and second regions can include a metal gate structure having a metal top layer. The other of the first and second regions can include an interfacial oxide layer formed on a high-k dielectric layer. A surface of the metal top layer can be oxidized to form a metal oxide top layer covering the metal top layer. The metal oxide top layer and the interfacial oxide layer can be removed by wet etching. A metal gate can be formed on the high-k dielectric layer.