The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Sep. 22, 2008
Applicants:
Kazuyoshi Yaguchi, Tokyo, JP;
Ryuji Sotoaka, Tokyo, JP;
Inventors:
Kazuyoshi Yaguchi, Tokyo, JP;
Ryuji Sotoaka, Tokyo, JP;
Assignee:
Mitsubishi Gas Chemical Company, Inc., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); C09K 13/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30608 (2013.01); B81C 1/00539 (2013.01);
Abstract
A silicon etching liquid characterized by anisotropically dissolving monocrystalline silicon therein by using an aqueous solution containing a quaternary ammonium hydroxide and an aminoguanidine salt and an etching method of silicon using the instant etching liquid are an etching liquid and an etching method enabling one to perform processing at a high etching rate in etching processing of silicon, particularly in etching processing of silicon in a manufacturing process of MEMS parts or semiconductor devices.