The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Nov. 21, 2013
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Mathias Plappert, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01); H01L 21/324 (2006.01); H01L 29/43 (2006.01); H01L 29/04 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02595 (2013.01); H01L 21/02598 (2013.01); H01L 21/02532 (2013.01); H01L 21/265 (2013.01); H01L 21/28 (2013.01); H01L 21/324 (2013.01); H01L 29/43 (2013.01); H01L 21/02667 (2013.01); H01L 29/04 (2013.01); H01L 21/04 (2013.01); H01L 21/02592 (2013.01); H01L 21/02609 (2013.01);
Abstract
According to an embodiment, a method for manufacturing a semiconductor structure includes providing a first monocrystalline semiconductor portion having a first lattice constant in a reference direction and forming a second monocrystalline semiconductor portion having a second lattice constant in the reference direction, which is different to the first lattice constant, on the first monocrystalline semiconductor portion.