The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Sep. 28, 2010
Applicants:
Xiying Costa, San Jose, CA (US);
Abhijit Bandyopadhyay, San Jose, CA (US);
Kun Hou, Milpitas, CA (US);
Brian Le, San Jose, CA (US);
Yung-tin Chen, Santa Clara, CA (US);
Inventors:
Xiying Costa, San Jose, CA (US);
Abhijit Bandyopadhyay, San Jose, CA (US);
Kun Hou, Milpitas, CA (US);
Brian Le, San Jose, CA (US);
Yung-Tin Chen, Santa Clara, CA (US);
Assignee:
SanDisk 3D LLC, Milpitas, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/24 (2006.01); H01L 27/102 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1021 (2013.01); H01L 45/1233 (2013.01); H01L 45/1675 (2013.01); H01L 27/2409 (2013.01); H01L 45/149 (2013.01); H01L 27/2481 (2013.01); H01L 45/04 (2013.01);
Abstract
A method of forming a memory cell is provided, the method including forming a diode including a first region having a first conductivity type, counter-doping the diode to change the first region to a second conductivity type, and forming a memory element coupled in series with the diode. Other aspects are also provided.