The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Apr. 04, 2011
Applicants:

Peter Baars, Dresden, DE;

Marco Lepper, Dresden, DE;

Uwe Kahler, Dresden, DE;

Vivien Schroeder, Ottendorf-Okrilla, DE;

Inventors:

Peter Baars, Dresden, DE;

Marco Lepper, Dresden, DE;

Uwe Kahler, Dresden, DE;

Vivien Schroeder, Ottendorf-Okrilla, DE;

Assignee:

GlobalFoundries Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 21/3213 (2006.01); H01L 21/285 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7843 (2013.01); H01L 21/32134 (2013.01); H01L 21/28518 (2013.01); H01L 29/665 (2013.01); H01L 21/02068 (2013.01); H01L 29/6653 (2013.01);
Abstract

The amount of Pt residues remaining after forming Pt-containing NiSi is reduced by performing an Oflash while shaping gate spacers, and then cleaning and applying a second application of Aqua Regia. Embodiments include sputter depositing a layer of Ni/Pt on a semiconductor substrate, annealing the Ni/Pt layer, wet stripping unreacted Ni, annealing the Ni stripped Ni/Pt layer, stripping unreacted Pt from the annealed Ni/Pt layer, e.g., with Aqua Regia, treating the Pt stripped Ni/Pt layer with an oxygen plasma, cleaning the Ni/Pt layer, and stripping unreacted Pt from the cleaned Ni/Pt layer, e.g., with a second application of Aqua Regia.


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