The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Apr. 05, 2012
Applicants:

Mark Fischer, Boise, ID (US);

T. Earl Allen, Kuna, ID (US);

H. Montgomery Manning, Eagle, ID (US);

Inventors:

Mark Fischer, Boise, ID (US);

T. Earl Allen, Kuna, ID (US);

H. Montgomery Manning, Eagle, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/467 (2006.01); H01L 21/84 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 29/7853 (2013.01); H01L 29/66818 (2013.01); Y10S 438/947 (2013.01);
Abstract

A process may include forming a mask directly on and above a region selected as an initial semiconductor fin on a substrate and reducing the initial semiconductor fin forming a semiconductor fin that is laterally thinned from the initial semiconductor fin. The process may be carried out causing the mask to recede to a greater degree in the lateral direction than the vertical direction. In various embodiments, the process may include removing material from the fin semiconductor to achieve a thinned semiconductor fin, which has receded beneath the shadow of the laterally receded mask. Electronic devices may include the thinned semiconductor fin as part of a semiconductor device.


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