The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Dec. 20, 2011
Applicants:

Tae Kyung Won, San Jose, CA (US);

Helinda Nominanda, Santa Clara, CA (US);

Seon-mee Cho, Santa Clara, CA (US);

Soo Young Choi, Fremont, CA (US);

Beom Soo Park, San Jose, CA (US);

John M. White, Hayward, CA (US);

Suhail Anwar, San Jose, CA (US);

Jozef Kudela, San Jose, CA (US);

Inventors:

Tae Kyung Won, San Jose, CA (US);

Helinda Nominanda, Santa Clara, CA (US);

Seon-Mee Cho, Santa Clara, CA (US);

Soo Young Choi, Fremont, CA (US);

Beom Soo Park, San Jose, CA (US);

John M. White, Hayward, CA (US);

Suhail Anwar, San Jose, CA (US);

Jozef Kudela, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/30 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/511 (2006.01); C23C 16/54 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 16/345 (2013.01); C23C 16/45578 (2013.01); C23C 16/511 (2013.01); C23C 16/545 (2013.01); H01J 37/32192 (2013.01); H01J 37/3222 (2013.01); H01J 37/3244 (2013.01);
Abstract

A method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power having a power density of about 500 milliWatts/cmto about 5,000 milliWatts/cmat a frequency of about 1 GHz to about 10 GHz.


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