The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Sep. 28, 2012
Applicant:

Jsr Corporation, Tokyo, JP;

Inventors:

Goji Wakamatsu, Tokyo, JP;

Hayato Namai, Tokyo, JP;

Syun Aoki, Tokyo, JP;

Assignee:

JSR Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); G03F 7/00 (2006.01); B44C 1/22 (2006.01); H01L 21/00 (2006.01); G03F 7/09 (2006.01);
U.S. Cl.
CPC ...
B44C 1/227 (2013.01); G03F 7/00 (2013.01); G03F 7/091 (2013.01); G03F 7/094 (2013.01); H01L 21/00 (2013.01); Y10S 430/118 (2013.01);
Abstract

A method for forming a pattern includes providing a composition to form a resist underlayer film on a surface of a substrate to be processed. The composition contains a calixarene based compound having a group represented by a following formula (i) bound to at least a part of an aromatic ring or at least a part of a heteroaromatic ring of the calixarene based compound. The resist underlayer film on the surface of the substrate is treated with heat or an acid. A resist pattern is formed on a surface of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask to form the pattern on the substrate. The dry-etched resist underlayer film is removed from the substrate with a basic solution.—O—R  (i)


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