The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Dec. 14, 2011
Applicants:

Yuuichirou Tokuda, Nisshin, JP;

Kazukuni Hara, Kasugai, JP;

Jun Kojima, Iwakura, JP;

Inventors:

Yuuichirou Tokuda, Nisshin, JP;

Kazukuni Hara, Kasugai, JP;

Jun Kojima, Iwakura, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 21/02 (2006.01); C30B 25/16 (2006.01); C30B 25/14 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C30B 25/165 (2013.01); C30B 25/14 (2013.01);
Abstract

An apparatus for manufacturing a silicon carbide single crystal grows the silicon carbide single crystal on a seed crystal by supplying a material gas from below the seed crystal. The apparatus includes a heating container and a base located in the heating container. The seed crystal is mounded on the base. The apparatus further includes a first inlet for causing a purge gas to flow along an inner wall surface of the heating container, a purge gas source for supplying the purge gas to the first inlet, a second inlet for causing the purge gas to flow along an outer wall surface of the base, and a mechanism for supporting the base and for supplying the purge gas to the base from below the base.


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