The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
May. 04, 2009
Hiroshi Amano, Nagoya, JP;
Akira Bando, Ichihara, JP;
Hiroshi Amano, Nagoya, JP;
Akira Bando, Ichihara, JP;
Toyoda Gosei Co., Ltd., Aichi, JP;
Abstract
A substrate is formed of AlGaN, wherein 0<x≦1. The substrate is a single crystal and is used producing a Group III nitride semiconductor device. A method for producing a substrate of AlGaN, wherein 0<x≦1, includes the steps of forming a layer of AlGaN, wherein 0<x≦1, on a base material and removing the base material. The method adopts the MOCVD method using a raw material molar ratio of a Group V element to Group III element that is 1000 or less, a temperature of 1200° C. or more for forming the layer of AlGaN, wherein 0<x≦1. The base material is formed of one member selected from the group consisting of sapphire, SiC, Si, ZnO and GaO. The substrate is used for fabricating a Group III nitride semiconductor device.