The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2014

Filed:

Dec. 30, 2011
Applicants:

Timothy Y. Kam, Portland, OR (US);

Jay D. Schwartz, Aloha, OR (US);

Seongwoo Kim, Beaverton, OR (US);

Stephen H. Gunther, Beaverton, OR (US);

Inventors:

Timothy Y. Kam, Portland, OR (US);

Jay D. Schwartz, Aloha, OR (US);

Seongwoo Kim, Beaverton, OR (US);

Stephen H. Gunther, Beaverton, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G06F 1/32 (2006.01); G11C 16/30 (2006.01); G11C 11/4074 (2006.01);
U.S. Cl.
CPC ...
G06F 1/3275 (2013.01); G11C 5/14 (2013.01); G11C 5/143 (2013.01); G11C 5/147 (2013.01); G11C 16/30 (2013.01); G11C 11/4074 (2013.01); Y02B 60/1228 (2013.01); Y02B 60/32 (2013.01);
Abstract

Power management of an embedded dynamic random access memory (eDRAM) by receiving an eDRAM power state transition event and determining both the current power state of the eDRAM and the next power state of the eDRAM from the power states of: a power-on state, a power-off state, and a self-refresh state. Using the current power state and the next power state to determine whether a power state transition is required, and, in the case that a power state transition is required, transition the eDRAM to the next power state. Power management is achieved because transitioning to a power-off state or self-refresh state reduces the amount of power consumed by the eDRAM as compared to the power-on state.


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