The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Sep. 17, 2010
Applicant:
Min-hsuan Tsai, Tainan County, TW;
Inventor:
Min-Hsuan Tsai, Tainan County, TW;
Assignee:
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/47 (2006.01); H01L 27/06 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 29/7839 (2013.01); H01L 29/0623 (2013.01); H01L 29/782 (2013.01); H01L 29/0638 (2013.01); H01L 29/872 (2013.01); H01L 29/0653 (2013.01);
Abstract
A high voltage device having a Schottky diode integrated with a MOS transistor includes a semiconductor substrate a Schottky diode formed on the semiconductor substrate, at least a first doped region having a first conductive type formed in the semiconductor substrate and under the Schottky diode, and a control gate covering a portion of the Schottky diode and the first doped region positioned on the semiconductor substrate.