The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
May. 15, 2013
Applicants:
Gordon M. Grivna, Mesa, AZ (US);
Zia Hossain, Tempe, AZ (US);
Kirk K. Huang, Chandler, AZ (US);
Balaji Padmanabhan, Tempe, AZ (US);
Francine Y. Robb, Fountain Hills, AZ (US);
Prasad Venkatraman, Gilbert, AZ (US);
Inventors:
Gordon M. Grivna, Mesa, AZ (US);
Zia Hossain, Tempe, AZ (US);
Kirk K. Huang, Chandler, AZ (US);
Balaji Padmanabhan, Tempe, AZ (US);
Francine Y. Robb, Fountain Hills, AZ (US);
Prasad Venkatraman, Gilbert, AZ (US);
Assignee:
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/45 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/66666 (2013.01); H01L 29/456 (2013.01); H01L 29/407 (2013.01); H01L 29/42368 (2013.01); H01L 29/66734 (2013.01); H01L 29/0869 (2013.01); H01L 29/7842 (2013.01); H01L 29/66727 (2013.01); H01L 29/41766 (2013.01); H01L 29/42376 (2013.01); H01L 29/7813 (2013.01);
Abstract
In one embodiment, a vertical insulated-gate field effect transistor includes a feature embedded within a control electrode. The feature is placed within the control electrode to induce stress within predetermined regions of the transistor.