The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Jan. 06, 2012
Applicants:
R. Jacob Baker, Meridian, ID (US);
Kurt D. Beigel, Boise, ID (US);
Inventors:
R. Jacob Baker, Meridian, ID (US);
Kurt D. Beigel, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 49/02 (2006.01); G11C 5/04 (2006.01); G11C 11/15 (2006.01); H01L 23/522 (2006.01); H01L 27/08 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/82 (2013.01); G11C 5/04 (2013.01); G11C 11/15 (2013.01); H01L 23/5223 (2013.01); H01L 27/0214 (2013.01); H01L 27/0805 (2013.01); Y10S 257/905 (2013.01); Y10S 257/908 (2013.01); Y10S 257/906 (2013.01);
Abstract
A capacitor for use in integrated circuits comprises a layer of conductive material. The layer of conductive material including at least a first portion and a second portion, wherein the first portion and the second portion are arranged in a predetermined pattern relative to one another to provide a maximum amount of capacitance per semiconductor die area.