The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Apr. 12, 2013
Applicant:
The Regents of the University of California, Oakland, CA (US);
Inventors:
Jing Lu, Goleta, CA (US);
Stacia Keller, Santa Barbara, CA (US);
Umesh K. Mishra, Montecito, CA (US);
Assignee:
The Regents of the University of California, Oakland, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/338 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for growing high mobility, high charge Nitrogen polar (N-polar) or Nitrogen face (In,Al,Ga)N/GaN High Electron Mobility Transistors (HEMTs). The method can provide a successful approach to increase the breakdown voltage and reduce the gate leakage of the N-polar HEMTs, which has great potential to improve the N-polar or N-face HEMTs' high frequency and high power performance.