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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8878235 B1

PDFFull Text
Date of Patent:
Nov. 04, 2014

Filed:

Sep. 18, 2011

Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same

Applicants:

April D. Schricker, Palo Alto, CA (US);

Wu-yi Chien, San Jose, CA (US);

Kun Hou, Milpitas, CA (US);

Raghuveer S. Makala, Sunnyvale, CA (US);

Jingyan Zhang, Santa Clara, CA (US);

Yibo Nian, Palo Alto, CA (US);

Inventors:

April D. Schricker, Palo Alto, CA (US);

Wu-Yi Chien, San Jose, CA (US);

Kun Hou, Milpitas, CA (US);

Raghuveer S. Makala, Sunnyvale, CA (US);

Jingyan Zhang, Santa Clara, CA (US);

Yibo Nian, Palo Alto, CA (US);

Assignee:

SanDisk 3D LLC, Milpitas, CA (US);

Attorney:

Dugan & Dugan, PC

Primary Examiner:

Daniel Shook

Int. Cl.
CPC ...
H01L 27/08 (2006.01); H01L 29/96 (2006.01); H01L 21/332 (2006.01); B82Y 10/00 (2011.01); H01L 45/00 (2006.01); H01L 27/10 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01); G11C 5/02 (2006.01); G11C 11/54 (2006.01); B82Y 20/00 (2011.01); G11C 13/02 (2006.01);
U.S. Cl.
CPC ...
B82Y 10/00 (2013.01); G11C 13/025 (2013.01); G11C 2213/79 (2013.01); H01L 45/149 (2013.01); H01L 27/101 (2013.01); H01L 45/1233 (2013.01); H01L 45/04 (2013.01); H01L 27/2409 (2013.01); G11C 13/0014 (2013.01); G11C 5/02 (2013.01); G11C 2213/72 (2013.01); H01L 27/2481 (2013.01); H01L 45/1616 (2013.01); G11C 11/54 (2013.01); G11C 2213/71 (2013.01); B82Y 20/00 (2013.01); G11C 2213/35 (2013.01); H01L 27/2436 (2013.01);
Abstract

In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element above a substrate, and fabricating a reversible-resistance switching element coupled to the steering element by selectively fabricating carbon nano-tube ('CNT') material above the substrate, wherein the CNT material comprises a single CNT. Numerous other aspects are provided.

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