The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Aug. 06, 2012
Applicants:
Jamil Kawa, Campbell, CA (US);
Min NI, Santa Clara, CA (US);
James D. Sproch, Monte Sereno, CA (US);
Qing Su, Sunnyvale, CA (US);
Zongwu Tang, Pleasanton, CA (US);
Inventors:
Jamil Kawa, Campbell, CA (US);
Min Ni, Santa Clara, CA (US);
James D. Sproch, Monte Sereno, CA (US);
Qing Su, Sunnyvale, CA (US);
Zongwu Tang, Pleasanton, CA (US);
Assignee:
Synopsys, Inc., Mountain View, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 23/48 (2006.01); H01L 23/62 (2006.01); H01L 27/02 (2006.01); H01L 23/60 (2006.01); G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5068 (2013.01); H01L 23/481 (2013.01); H01L 23/62 (2013.01); H01L 27/0255 (2013.01); H01L 23/60 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Roughly described, an antenna diode is formed at least partially within the exclusion zone around a TSV, and is connected to the TSV by way of a metal 1 layer conductor at the same time that the TSV is connected to either the gate poly or a diffusion region of one or more transistors placed outside the exclusion zone.