The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Dec. 27, 2012
Jin-bum Kim, Seoul, KR;
Young-pil Kim, Hwaseong-si, KR;
Kwan-heum Lee, Suwon-si, KR;
Sun-ghil Lee, Hwaseong-si, KR;
Jin-Bum Kim, Seoul, KR;
Young-Pil Kim, Hwaseong-si, KR;
Kwan-Heum Lee, Suwon-si, KR;
Sun-Ghil Lee, Hwaseong-si, KR;
Abstract
In a method of forming an ohmic layer of a DRAM device, the metal silicide layer between the storage node contact plug and the lower electrode of a capacitor is formed as the ohmic layer by a first heat treatment under a first temperature and an instantaneous second heat treatment under a second temperature higher than the first temperature. Thus, the metal silicide layer has a thermo-stable crystal structure and little or no agglomeration occurs on the metal silicide layer in the high temperature process. Accordingly, the sheet resistance of the ohmic layer may not increase in spite of the subsequent high temperature process.