The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2014

Filed:

May. 21, 2014
Applicant:

Everspin Technologies, Inc., Chandler, AZ (US);

Inventors:

Kerry Nagel, Scottsdale, AZ (US);

Sarin Deshpande, Chandler, AZ (US);

Moazzem Hossain, Chandler, AZ (US);

Sanjeev Aggarwal, Scottsdale, AZ (US);

Assignee:

EverSpin Technologies, Inc., Chandler, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); G11C 11/00 (2006.01); H01L 43/12 (2006.01); H01L 21/768 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 21/76898 (2013.01); H01L 27/222 (2013.01);
Abstract

A method is provided for forming a first via with an electrically conductive material, for example, copper, that is formed over and coupled to a conductive landing pad of an MRAM array. A sputter step is performed to lower the surface of the first via below that of a surrounding dielectric material. This recess is repeated in subsequent processing steps, providing alignment marks for the formation of a magnetic tunnel junction. The magnetic tunnel junction may be offset from the first via, and a second via being formed above the magnetic tunnel junction and to a conductive layer.


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