The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Feb. 01, 2013
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Kwangjin Moon, Hwaseong-si, KR;
SuKyoung Kim, Suwon-si, KR;
Kunsang Park, Hwaseong-si, KR;
Byung Lyul Park, Seoul, KR;
Sukchul Bang, Yongin-si, KR;
Jin Ho An, Seoul, KR;
Kyu-Ha Lee, Yongin-si, KR;
Dosun Lee, Gwangju, KR;
Gilheyun Choi, Seoul, KR;
Abstract
Provided are semiconductor devices with a through electrode and methods of fabricating the same. The methods may include forming a via hole at least partially penetrating a substrate, the via hole having an entrance provided on a top surface of the substrate, forming a via-insulating layer to cover conformally an inner surface of the via hole, forming a buffer layer on the via-insulating layer to cover conformally the via hole provided with the via-insulating layer, the buffer layer being formed of a material whose shrinkability is superior to the via-insulating layer, forming a through electrode to fill the via hole provided with the buffer layer, and recessing a bottom surface of the substrate to expose the through electrode.