The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Apr. 12, 2011
Shunpei Yamazaki, Setagaya, JP;
Jun Koyama, Sagamihara, JP;
Kiyoshi Kato, Atsugi, JP;
Takaaki Koen, Hakusan, JP;
Yuto Yakubo, Atsugi, JP;
Makoto Yanagisawa, Ebina, JP;
Hisashi Ohtani, Kanagawa, JP;
Eiji Sugiyama, Ichinomiya, JP;
Nozomi Horikoshi, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Jun Koyama, Sagamihara, JP;
Kiyoshi Kato, Atsugi, JP;
Takaaki Koen, Hakusan, JP;
Yuto Yakubo, Atsugi, JP;
Makoto Yanagisawa, Ebina, JP;
Hisashi Ohtani, Kanagawa, JP;
Eiji Sugiyama, Ichinomiya, JP;
Nozomi Horikoshi, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 10to 10Ω/cmis formed on at least one surface of each structure body.