The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Jun. 13, 2013
Infineon Technologies Austria Ag, Villach, AT;
Frank Pfirsch, Munich, DE;
Maria Cotorogea, Ottoburnn, DE;
Franz Hirler, Isen, DE;
Franz-Josef Niedernostheide, Muenster, DE;
Thomas Raker, Ottobrunn, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Hans Peter Felsl, Munich, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.