The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Mar. 12, 2013
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Juyul Lee, Hwaseong-si, KR;
Bumsu Kim, Seongnam-si, KR;
Kwangmin Park, Seoul, KR;
Hyun Park, Hwaseong-si, KR;
Jae-Young Ahn, Seongnam-si, KR;
Dongchul Yoo, Seongnam-si, KR;
Jongsik Chun, Hwaseong-si, KR;
Kihyun Hwang, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A three-dimensional (3D) semiconductor memory device includes an electrode separation pattern, a stack structure, a data storage layer, and a channel structure. The electrode separation pattern is disposed on a substrate. A stack structure is disposed on a sidewall of the electrode separation pattern. The stack structure includes a corrugated sidewall opposite to the sidewall of the electrode separation pattern. The sidewall of the electrode separation pattern is vertical to the substrate. A data storage layer is disposed on the corrugated sidewall. A channel structure is disposed on the charge storage layer.