The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2014

Filed:

Sep. 14, 2012
Applicant:

Fumitake Mieno, Shanghai, CN;

Inventor:

Fumitake Mieno, Shanghai, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 21/8238 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device manufacturing method includes providing a mask on a semiconductor member. The method further includes providing a dummy element to cover a portion of the mask that overlaps a first portion of the semiconductor member and to cover a second portion of the semiconductor member. The method further includes removing a third portion of the semiconductor member, which has not been covered by the mask or the dummy element. The method further includes providing a silicon compound that contacts the first portion of the semiconductor member. The method further includes removing the dummy element to expose and to remove the second portion of the semiconductor member. The method further includes forming a gate structure that overlaps the first portion of the semiconductor member. The first portion of the semiconductor member is used as a channel region and is supported by the silicon compound.


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