The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Nov. 16, 2012
Applicant:
Imec, Leuven, BE;
Inventors:
Anne S. Verhulst, Houtvenne, BE;
Thomas Hantschel, Houtvenne, BE;
Wilfried Vandervorst, Leuven, BE;
Cedric Huyghebaert, Leuven, BE;
Assignee:
IMEC, Leuven, BE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 21/30 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 29/1025 (2013.01); H01L 29/66356 (2013.01); H01L 21/30 (2013.01); H01L 29/36 (2013.01);
Abstract
A tunnel Field Effect Transistor is provided comprising an interface between a source and a channel, the source side of this interface being a layer of a first crystalline semiconductor material being substantially uniformly doped with a metal to the solubility level of the metal in the first crystalline material and the channel side of this interface being a layer of this first crystalline semiconductor material doped with this metal, the concentration decreasing towards the channel.