The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Aug. 29, 2011
Sang-wuk Park, Osan-si, KR;
Geum-jung Seong, Seoul, KR;
Kye-hyun Baek, Suwon-si, KR;
Yong-jin Kim, Suwon-si, KR;
Chan-mi Lee, Hwaseong-si, KR;
Sang-Wuk Park, Osan-si, KR;
Geum-Jung Seong, Seoul, KR;
Kye-Hyun Baek, Suwon-si, KR;
Yong-Jin Kim, Suwon-si, KR;
Chan-Mi Lee, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is an etching system and a method of controlling etching process condition. The etching system includes a light source that irradiates incident light into a target wafer, a light intensity measuring unit that measures light intensity according to the wavelength of interference light generated by interference between reflected light beams from the target wafer, a signal processor that detects a time point at which an extreme value in the intensity is generated when the intensity of interference light varies according to the wavelength, and a controller that compares the extreme value generating time point detected from the signal processor with a reference time point corresponding to the extreme value generating time point and controls a process condition according to the comparison result.