The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Mar. 15, 2013
Kingwave Corporation, Taipei, TW;
Chieh-Hsiung Kuan, Taipei, TW;
Wen-Sheng Su, Taipei, TW;
Kingwave Corporation, Taipei, TW;
Abstract
A method for manufacturing a semiconductor template balanced between strains and defects is provided, the method including steps of: preparing a substrate, dividing the substrate into a plurality of first patterned zones and a plurality of second patterned zones, the second patterned zones applied to separate the first patterned zones; selecting a semiconductor with an ideal lattice of a semiconductor buffer layer to be deposited on the substrate; etching a plurality of first microstructures in the first patterned zones according to the semiconductor with the ideal lattice, the first microstructures and the semiconductor with the ideal lattice following a lattice-structure matching relationship, discovered by strain-traction experiments, making the substrate a multi-patterned substrate; and depositing the semiconductor buffer layer having the semiconductor with the ideal lattice on the multi-patterned substrate to manufacture a semiconductor template which is balanced between strains and defects.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile