The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Dec. 27, 2012
Intermolecular, Inc., San Jose, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
Embodiments of the present invention include diffusion barriers, methods for forming the barriers, and semiconductor devices utilizing the barriers. The diffusion barrier comprises a self-assembled monolayer (SAM) on a semiconductor substrate, where one surface of the SAM is disposed in contact with and covalently bonded to the semiconductor substrate, and one surface of the monolayer is disposed in contact with and covalently bonded to a metal layer. In some embodiments, the barrier comprises an assembly of one or more monomeric subunits of the following structure: Si—(CH)-(LM)where n is from 1 to 20, y is from 2n−2 to 2n, m is 1 to 3, L is a Group VI element, and M is a metal, such as copper. In some embodiments, (CH) can be branched, crosslinked, or cyclic.