The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Aug. 30, 2012
Johannes Josephus Theodorus Marinus Donkers, Valkenswaard, NL;
Petrus Hubertus Cornelis Magnee, Malden, NL;
Blandine Duriez, Brussels, BE;
Evelyne Gridelet, Omal, BE;
Hans Mertens, Leuven, BE;
Tony Vanhoucke, Bierbeek, BE;
Johannes Josephus Theodorus Marinus Donkers, Valkenswaard, NL;
Petrus Hubertus Cornelis Magnee, Malden, NL;
Blandine Duriez, Brussels, BE;
Evelyne Gridelet, Omal, BE;
Hans Mertens, Leuven, BE;
Tony Vanhoucke, Bierbeek, BE;
NXP, B.V., Eindhoven, NL;
Abstract
Disclosed is an integrated circuit and a method of manufacturing an integrated circuit comprising a bipolar transistor, the method comprising providing a substrate comprising a pair of isolation regions separated by an active region comprising a collector; forming a base layer stack over said substrate; forming a migration layer having a first migration temperature and an etch stop layer; forming a base contact layer having a second migration temperature; etching an emitter window in the base contact layer, thereby forming cavities extending from the emitter window; and exposing the resultant structure to the first migration temperature in a hydrogen atmosphere, thereby filling the cavities with the migration layer material.