The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Jul. 26, 2012
Applicants:
Daniel Tang, Fremont, CA (US);
Tzu-shih Yen, Hsinchu, TW;
Inventors:
Daniel Tang, Fremont, CA (US);
Tzu-Shih Yen, Hsinchu, TW;
Assignee:
Advanced Ion Beam Technology, Inc., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66803 (2013.01); H01L 29/66795 (2013.01); H01L 29/78684 (2013.01); H01L 21/02636 (2013.01); H01L 29/785 (2013.01); H01L 29/0673 (2013.01);
Abstract
A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched to expose a first region of the fin. A portion of the first region is then doped with a dopant.