The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Dec. 19, 2011
Koichi Hirano, Osaka, JP;
Shingo Komatsu, Osaka, JP;
Yasuteru Saito, Kyoto, JP;
Naoki Ike, Kyoto, JP;
Koichi Hirano, Osaka, JP;
Shingo Komatsu, Osaka, JP;
Yasuteru Saito, Kyoto, JP;
Naoki Ike, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Dai-Ichi Kogyo Seiyaku Co., Ltd., Kyoto, JP;
Abstract
The present invention achieves a formation of a metal oxide film of a thin film transistor with a simplified process. The present invention is concerned with a method for manufacturing a field-effect transistor comprising a gate electrode, a source electrode, a drain electrode, a channel layer and a gate insulating layer wherein the channel layer is formed by using a metal salt-containing composition comprising a metal salt, a polyvalent carboxylic acid having a cis-form structure of —C(COOH)═C(COOH)—, an organic solvent and a water wherein a molar ratio of the polyvalent carboxylic acid to the metal salt is in the range of 0.5 to 4.0.