The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Mar. 22, 2012
Fu-tai Liou, Hsinchu County, TW;
Chien-min Lee, Hsinchu County, TW;
Chih-chien Liang, Hsinchu County, TW;
Nai-chung Fu, Taoyuan County, TW;
Fu-Tai Liou, Hsinchu County, TW;
Chien-Min Lee, Hsinchu County, TW;
Chih-Chien Liang, Hsinchu County, TW;
Nai-Chung Fu, Taoyuan County, TW;
Other;
Abstract
A method or manufacturing an integrated circuit structure with a magnetoresistance component is provided. A substrate is provided. A circuit structure layer including a metal pad is formed on the substrate. A dielectric layer is formed on the circuit structure. A metal damascene structure is formed in the dielectric layer. An opening is formed in the dielectric layer so as to form a step-drop. A magnetoresistance material layer is formed on the dielectric layer after forming the metal damascene structure and the opening. A photolithography process is applied to pattern the magnetoresistance material layer to form a magnetoresistance component electrically connected to the metal damascene structure.