The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Aug. 23, 2012
Po-yuan Teng, New Taipei, TW;
Yung-chang Lin, Hsinchu, TW;
Po-wen Chiu, Hsinchu, TW;
National Tsing Hua University, Hsinchu, TW;
Abstract
A method for synthesizing graphene films is disclosed. Monolayer or multilayer graphene can be directly grown on the dielectric materials. The method includes the following steps: disposing dielectric materials and metals in a reactor, introducing reaction gases into the reactor and decomposing the reaction gases by heating, thus directly depositing graphene films on the surfaces of the dielectrics. High crystalline quality and low-defect graphene films can be synthesized directly on dielectric materials, without the process of wet etching and transfer. The method opens up a more direct route to apply graphene on electronics, optoelectronics, and bio-medical devices.