The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8871107 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 28, 2014

Filed:

Mar. 15, 2013
Applicants:

International Business Machines Corporation, Armonk, NY (US);

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Nicholas C. M. Fuller, North Hills, NY (US);

Eric A. Joseph, White Plains, NY (US);

Hiroyuki Miyazoe, White Plains, NY (US);

Mark Hoinkis, Fishkill, NY (US);

Chun Yan, San Jose, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); C23F 3/00 (2006.01); H01L 21/44 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76885 (2013.01);
Abstract

A method of forming at least one metal or metal alloy feature in an integrated circuit is provided. In one embodiment, the method includes providing a material stack including at least an etch mask located on a blanker layer of metal or metal alloy. Exposed portions of the blanket layer of metal or metal alloy that are not protected by the etch mask are removed utilizing an etch comprising a plasma that forms a polymeric compound and/or complex which protects a portion of the blanket layer of metal or metal alloy located directly beneath the etch mask during the etch.


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