The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2014

Filed:

Jan. 18, 2011
Applicant:

Wataru Shimizu, Nirasaki, JP;

Inventor:

Wataru Shimizu, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 13/00 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01J 37/32 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01); H01L 21/683 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6831 (2013.01); H01J 37/32165 (2013.01); H01L 21/31116 (2013.01); H01L 21/3105 (2013.01); H01L 21/76814 (2013.01); H01J 37/32091 (2013.01); H01L 21/76826 (2013.01); H01L 21/76808 (2013.01); H01L 21/67069 (2013.01);
Abstract

A recovery process of a damaged layer and a reducing process of an oxide are performed on a substrate in which the oxide and the damaged layer from which carbon has been eliminated are formed on exposed surfaces of a Cu wiring and a SiCOH film as a low-k film, respectively. In the same processing chamber, a recovery process of a damaged layerand a reducing process of an oxide/fluoride layerare performed on a wafer W in which the damaged layerfrom which carbon has been eliminated and the oxide/fluoride layerare formed on exposed surfaces of an interlayer insulating filmcontaining SiCOH and a wiringcontaining Cu, respectively, by consecutively supplying Hgas and TMSDMA gas containing silicon and carbon in sequence.


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