The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2014

Filed:

May. 28, 2010
Applicants:

Tao Feng, Santa Clara, CA (US);

Anup Bhalla, Santa Clara, CA (US);

Inventors:

Tao Feng, Santa Clara, CA (US);

Anup Bhalla, Santa Clara, CA (US);

Assignee:

Alpha & Omega Semiconductor, Inc., Sunnyvale, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 23/48 (2006.01); H01L 29/06 (2006.01); H01L 23/00 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0657 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01047 (2013.01); H01L 2224/06102 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48465 (2013.01); H01L 24/48 (2013.01); H01L 2924/13055 (2013.01); H01L 2224/48463 (2013.01); H01L 29/7813 (2013.01); H01L 2924/01033 (2013.01); H01L 2224/06051 (2013.01); H01L 2924/01079 (2013.01); H01L 2224/92247 (2013.01); H01L 2924/3011 (2013.01); H01L 2924/01006 (2013.01); H01L 29/41741 (2013.01); H01L 2924/01005 (2013.01); H01L 29/42372 (2013.01); H01L 24/03 (2013.01); H01L 2924/01013 (2013.01); H01L 24/06 (2013.01); H01L 2924/014 (2013.01); H01L 29/66734 (2013.01); H01L 2924/01029 (2013.01); H01L 23/481 (2013.01); H01L 2224/29006 (2013.01); H01L 24/05 (2013.01); H01L 2924/01075 (2013.01); H01L 2224/0603 (2013.01); H01L 2924/13091 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/49107 (2013.01); H01L 29/781 (2013.01);
Abstract

A semiconductor device with substrate-side exposed device-side electrode (SEDE) is disclosed. The semiconductor device has semiconductor substrate (SCS) with device-side, substrate-side and semiconductor device region (SDR) at device-side. Device-side electrodes (DSE) are formed for device operation. A through substrate trench (TST) is extended through SCS, reaching a DSE turning it into an SEDE. The SEDE can be interconnected via conductive interconnector through TST. A substrate-side electrode (SSE) and a windowed substrate-side passivation (SSPV) atop SSE can be included. The SSPV defines an area of SSE for spreading solder material during device packaging. A device-side passivation (DSPV) beneath thus covering the device-side of SEDE can be included. A DSE can also include an extended support ledge, stacked below an SEDE, for structurally supporting it during post-wafer processing packaging. The projected footprint of extended support ledge onto the major SCS plane can essentially enclose the correspondingly projected footprint of SEDE.


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