The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2014

Filed:

Mar. 29, 2012
Applicants:

Avi Feshali, Los Angeles, CA (US);

Tao Sherry Yin, San Jose, CA (US);

Ansheng Liu, Cupertino, CA (US);

Inventors:

Avi Feshali, Los Angeles, CA (US);

Tao Sherry Yin, San Jose, CA (US);

Ansheng Liu, Cupertino, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 21/00 (2006.01); H01L 31/102 (2006.01); H01L 31/10 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0232 (2013.01); H01L 31/10 (2013.01); H01L 31/18 (2013.01);
Abstract

Described are embodiments of apparatuses and systems including photonic devices having a conductive shunt layer, and methods for making such apparatuses and systems. A photonic device may include a device substrate, a photo-active region disposed on a first region of the device substrate, an isolation region in the device substrate, a contact disposed on a second region of the substrate such that the isolation region is located between the contact and the photo-active region, and a conductive material overlying the isolation region to shunt the first region with the second region. Other embodiments may be described and/or claimed.


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